Broadband mm-Wave Power Amplifiers: A Review of Recent Advances in InP and CMOS Technologies

Abstract

This paper presents a comprehensive review of recent advances in broadband mm-wave power amplifiers (PAs), focusing on innovations in indium phosphide (InP) and complementary metal-oxide-semiconductor (CMOS) technologies. As demand for higher data rates and broader bandwidths increases, mm-wave PAs have become critical components in enabling high-frequency applications, including 5G and beyond. This review critically assesses the progress in the design and performance of mm-wave PAs, highlighting significant achievements in efficiency, linearity, and output power. The use of InP technology is emphasized for its superior electron mobility and high-frequency capability, which make it ideal for high-performance mm-wave applications. Similarly, the scalability and integration capabilities of CMOS technology are discussed, with a focus on recent developments that have improved its viability at mm-wave frequencies. This paper also explores the challenges and solutions associated with each technology, including design strategies, material considerations, and fabrication techniques. The comparative analysis provides insights into how these technologies are shaping the future of mm-wave applications, offering a glimpse into upcoming trends and potential breakthroughs in PA design.